Microsecond

In subject area: Engineering

Microseconds refer to a unit of time defined as 10^−6 seconds, or one millionth of a second.

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From Nanosecond to Picosecond to Femtosecond Reaction Kinetics

The quest for shorter light pulses to study chemical reactions predates the invention of the laser. In the early days, electric discharges were used to measure fast dynamics in the millisecond (10−3 s) and then the microsecond (10−6 s) time-scales. With the invention of the laser, measurements improved drastically with temporal resolution going from the nanosecond (10−9 s) to the picosecond (10−12 s) time-scales. Since the early days, it was recognized that the best time resolution was obtained when pairs of light pulses were used – one to initiate the reaction and the second to probe it. These pump-probe measurements have progressed with the laser technology almost to the single femtosecond level.

The measurements being considered here go beyond the measurement of fast reaction kinetics. When a chemical reaction occurs in a beaker, one usually measures a statistical rate of reaction that involves diffusion of reagents in a solvent. These kinetic measurements, which involve an ensemble of molecules, are much slower and do not reveal the fundamental steps of the reaction such as bond formation. The introduction of ultrafast pulses allowed, for the first time, the measurement of the motion of the atoms in real time, as if the motion was frozen by ultrafast flash photography. Capturing this motion helps to reveal the internal forces, described by a potential energy surface, that act on the atoms in the molecule during the chemical reaction. This concept is illustrated in Figure 1, where we see the reagents and the products for the reaction. Typically, the starting and ending point of a chemical reaction are very well known and the compounds are very well characterized. However, how the reagents become the products is not always known. Chemists typically deduce a reaction mechanism based on a large body of experiments where different parameters including the structure of the reagents are modified to evaluate their effect on the outcome of the reaction. Unfortunately in most cases, reaction mechanisms, even when consistent with all available experimental evidence, may not accurately reflect how a particular chemical reaction takes place.

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Figure 1. A sketch of a chemical reaction, AB+CD→A+BCD. The reactants and products are well known, but it is not known how they change from reactants to products. This mechanism may involve a transition state which is (a) a linear complex with vibrational motion, (b) a nonlinear complex, (c) a bent complex with rotational motion, or many other possibilities and combinations. The elucidation of the mechanism and transition state dynamics are the goals of femtosecond time-resolved studies.

The ideal method to make the determination involves direct observation. As mentioned earlier, direct observation requires femtosecond laser pulses, just like a fast camera shutter is required to take pictures of fast-moving objects. The concept of a femtosecond pump-probe measurement is illustrated in Figure 2. The chemical reaction is initiated at time t=0 fs by the pump laser. The pump laser provides the energy required for initiating the chemical transformation. The probe laser, delayed in time, probes the formation of the product. Figure 2 illustrates a number of pump-probe measurements each obtained at a different time delay between the pump and probe laser pulses. When a series of pump-probe measurements are gathered as a function of time delay, one obtains a transient that contains a record for the evolution of the reagents to product as a function of time.

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Figure 2. Energy schematic of the reaction of AB+CD→A+BCD assuming vibrational motion in a linear transition state. The pump pulse provides enough energy to excite the reactants to the transition state at t=0. This transition state is probed by the second pulse. This pulse arrives at different time delays, from no delay (t=0), to increasing delays (t1, t2,…), to infinite delay (t). The signal varies depending on the time delay between the two pulses and these changes in signal intensity correspond to vibrational and rotational information about the transition state. To obtain a transient as shown at the bottom, the time delay between the pump and probe pulses is scanned. The dashed line shows the transient that would be obtained when the transition state is monitored; the solid line shows the transient that would be obtained when the product is monitored.

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URL: https://www.sciencedirect.com/science/article/pii/B0123693950009453

6.4 Microsecond Pulse Measurements

With the recognition that the electrical breakdown of these micropoint-emitter diodes was a sub-microsecond “explosive” phenomenon involving the thermal response of the emitter, it became evident that high-speed pulse techniques would have to be employed if more detailed information was to be obtained about the evolution of the breakdown mechanism. The early experiments were again pioneered by Dyke and his co-workers in the USA [13,16], who used microsecond pulse techniques to study how the growth of the emission current waveform depends on the magnitude and duration of the applied field. More recently, the Russian groups of Fursey and Mesyats [1,17–22] have used more refined nanosecond pulse techniques to resolve the sequence of events involved in the breakdown mechanism of these diodes. These investigations also incorporated synchronised high-speed optical recording techniques to study the development of the microplasma or “cathode flare” that is a precursor to the actual breakdown of the diode.

6.4.1 Experimental Regime

The practical requirements for this type of impulse measurement are principally dictated by the demands of high speed pulse technology. Thus, if nanosecond rise times are to be achieved, it is essential to minimise all stray capacitances, and to ensure that the external drive and detection circuitry are impedance-matched throughout. In the type of system developed initially by Mesyats et al. [18] and later by Fursey and Zhukov [19], which is illustrated schematically in Fig 6.8, these conditions have been satisfied in part by generally reducing the dimensions of the electrode assembly. More important however, the planar anode of the DC experimental regime of Fig 6.3 has been replaced by a “transparent” earthed grid G, whilst an additional “collector” electrode C has been introduced immediately behind G. This new triode arrangement has the important advantage of reducing the anode-to-cathode capacitance and thereby minimising the interference from the displacement currents that must inevitably flow following the application of a voltage pulse and that would otherwise mask the true electron current.

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Fig 6.8. The experimental regime used for studying the electronic and optical processes associated with the pulsed-field breakdown of micropoint emitters.

(From Fursey and Zhukov [19], with permission).

The omission of an electron bombardment anode heating facility is acceptable for these fast impulse experiments provided the system receives a thorough external bake-out before sealing off the test diode. This is because the thermal response time of the anode is very much longer than the rise time of the emission current so that its surface processes can have no influence on the emitter behaviour. It was also found possible to eliminate the cathode heating arrangement of Fig 6.3, since emitters can be satisfactorily cleaned by a reverse-polarity field-desorption procedure. The orthogonally orientated optical monitoring systems I and II shown in Fig 6.8, incorporating focusing f, light-amplifying la and camera c modules, are used respectively for studying the reference electron emission image displayed on C (i.e. if phosphor-coated), and the photon emission from interelectrode microplasma processes. Referring finally to the associated electrical circuitry, the negative-going high voltage pulses that are applied to the micropoint emitter are derived from an EHT supply that is electronically switched by a fast acting three electrode switch S that is filled with nitrogen at a pressure of 15 atm. Oscilloscopes 1 and 2, that are synchronously triggered from the initial fast pulse resulting from the charging of the transmission line, record respectively the total emission current and the collector current. For minimal pulse distortion, it is vital to impedance-match the transmission lines to the test diode assembly.

6.4.2 Pulsed Emission Characteristics

We shall consider first the earlier experiments pioneered by Dyke and his collaborators [13,16], and later developed by Fursey [23], that used μ-second pulse techniques to investigate the thermal response of micro-emitters. These showed that for emission current densities jF ≲ (jF)L (see Fig 6.6), the total current transient had the type of waveform illustrated schematically in Fig 6.9(i), where the initial spike is due to the displacement current associated with the charging of the inter-electrode capacitance and the following constant-current plateau region is indicative of stable emission conditions.

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Fig 6.9. (i) The pulsed-field current response of a micropoint emitter when jF ≲ (jF)L. (ii) A family of similar measurements showing the onset of the “tilt” phenomenon as jF is increased from (jF)L to (jF)C.

If the pulsed-field current-voltage characteristic of the emitter is now measured by this technique for the field range corresponding to jF ≲(JF)L, the data are found to give an identical F-N plot to the DC behaviour shown in Fig 6.6. When these pulse measurements are extended to higher fields, where the DC emission current density would exceed (jF)L, the current waveform begins to develop an upward “tilt” as illustrated in the traces of Fig 6.9(ii); i.e. the current exhibits a spontaneous growth at constant field, approaching a saturated equilibrium value with a time constant τ ∼ 1−2 μs. Provided these saturated emission current values are used, the F-N plot of the emitter continues to closely follow the DC behaviour of Fig 6.6 into the nonlinear region. However, with pulse experiments, breakdown is more predictable and generally occurs at a somewhat higher field Eb corresponding to a pulsed-field critical emission current density (jF)C ∼ 7.8 × 1011 Am−2.

The associated emission image, as recorded by the open-shutter camera of optical system I in Fig 6.8, is found to have the same general form as found with DC experiments, including the space charge “blurring” effect of Fig 6.4(ii) that occurs when jF ≳ (jF)L. There is however an additional feature that develops at the highest pulse fields used, i.e. just prior to breakdown and coincident with the onset of current “tilt”. As illustrated in Fig 6.10(i), this takes the form of a bright ring structure, or halo, that skirts the emission image and can reach intensities considerably in excess of the rest of the image [16]. Subsequently, Fursey [23] showed that this halo could in fact be resolved into several well-defined concentric rings.

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Fig 6.10. (i) The space-charge blurred emission image with associated “ring” phenomenon that occurs when jF → (jF)c, and is coincident with the onset of the “tilt” phenomenon illustrated in Fig 6.9(ii). (ii) The characteristic “necked” structure of an emitter that has been overloaded and become thermally unstable.

(From Fursey [23], with permission.) (From Dyke, Trolan, Martin and Barbour [16], with permission.)

The evident correlation between these “tilt” and “ring” phenomena led Dyke et al. [16] to attribute them to a thermally enhanced field electron emission mechanism, viz. T-F emission as discussed above, which begins to contribute significantly to the total emission current as local regions of an emitter reach temperatures ≳2000 K. This explanation was supported by the observations that the profile of emitters that had previously exhibited these effects were characterised by having a “necked” structure as shown in Fig 6.10(ii), and that the electrons forming the ring came from the relatively low-field shaded region situated very near the neck of the emitter where the internal current density, and hence the Joulian heating effect, will be a maximum; i.e. creating a particularly favourable location for the onset of T-F emission. However, more recent scanning electron micrographs of tips that have become thermally unstable, i.e. such as shown in Fig 3.14, have indicated rather that the surface of the shaded neck region of Fig 6.10(ii) acquires a corrugated or “bellows-like” structure whose periodic field enhancing properties could well account for the multiplicity of the rings forming the halo surrounding the emission image shown in Fig 6.10(i). It also follows from this model that the characteristic 1−2 μs rise time τt of the “tilt” current must be related to the establishment of a thermal equilibrium in the emitter. An impressive check on this assumption can be made by observing how the maximum stable emission current density depends on the duration tp of the applied voltage pulse, particularly when the pulse length is reduced to the situation where tp ≲ 0.2τt ≲ 0.5 μs, so that the temperature increase of an emitter will be limited to well below its maximum equilibrium value. The earliest experiments of this kind using microsecond pulse techniques [16] confirmed that (jF)C could be increased by an order of magnitude to ∼ 5 × 1012 Am−2: however, the more recent nanosecond experiments to be discussed in the following section showed even more dramatic increases of (jF)c approaching ∼ 1015 Am−2.

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URL: https://www.sciencedirect.com/science/article/pii/B9780124371750500105

Microseconds/Milliseconds/Seconds Options

Delays can be specified in units of microseconds, milliseconds or seconds. When simulating delays in seconds, a dialog box will appear showing how much of the delay has elapsed. A cancel button on the dialog allows the execution of the flowchart to continue before the entire delay has passed. To allow Flowcode to correctly program your chip with the correct delay setting you will need to select a clock speed for your chip. The dialog box for this can be seen by selecting Edit … Project Options.

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2008, FPGAs: Instant AccessClive Max Maxfield

Embedded Processor Cores

Almost any portion of an electronic design can be realized in hardware (using logic gates and registers, etc.) or software (as instructions to be executed on a microprocessor). One of the main partitioning criteria is how fast you wish the various functions to perform their tasks:

Picosecond and nanosecond logic: This has to run insanely fast, which mandates that it be implemented in hardware (in the FPGA fabric).

Microsecond logic: This is reasonably fast and can be implemented either in hardware or software (this type of logic is where you spend the bulk of your time deciding which way to go).

Millisecond logic: This is the logic used to implement interfaces such as reading switch positions and flashing light-emitting diodes (LEDs). It's a pain slowing the hardware down to implement this sort of function (using huge counters to generate delays, for example). Thus, it's often better to implement these tasks as microprocessor code (because processors give you lousy speed—compared to dedicated hardware—but fantastic complexity).

The fact is that the majority of designs make use of microprocessors in one form or another. Until recently, these appeared as discrete devices on the circuit board. Of late, high-end FPGAs have become available that contain one or more embedded microprocessors, which are typically referred to as microprocessor cores. In this case, it often makes sense to move all of the tasks that used to be performed by the external microprocessor into the internal core. This provides a number of advantages, not the least being that it saves the cost of having two devices; it eliminates large numbers of tracks, pads, and pins on the circuit board; and it makes the board smaller and lighter.

Hard Microprocessor Cores

A hard microprocessor core is implemented as a dedicated, predefined block. There are two main approaches for integrating such a core into the FPGA:

1.

Locate it in a strip (actually called “The Stripe”) to the side of the main FPGA fabric (Figure 2-13). In this scenario, all of the components are typically formed on the same silicon chip, although they could also be formed on two chips and packaged as a multichip module (MCM). The main FPGA fabric would also include the embedded RAM blocks, multipliers, and so on, but these have been omitted from this illustration to keep things simpler.

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Figure 2-13. Bird's-eye view of chip with embedded core outside of the main fabric.

One advantage of this implementation is that the main FPGA fabric is identical for devices with and without the embedded microprocessor core, which can help make things easier for the design tools used by the engineers. The other advantage is that the FPGA vendor can bundle a whole load of additional functions in the strip to complement the microprocessor core, such as memory, special peripherals, and so forth.

2.

An alternative is to embed one or more microprocessor cores directly into the main FPGA fabric. One-, two-, and even four-core implementations are currently available (Figure 2-14). In this case, the design tools have to be able to take account of the presence of these blocks in the fabric; any memory used by the core is formed from embedded RAM blocks, and any peripheral functions are formed from groups of general-purpose programmable logic blocks. Proponents of this scheme will argue that there are inherent speed advantages to be gained from having the microprocessor core in intimate proximity to the main FPGA fabric.

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Figure 2-14. Bird's-eye view of chips with embedded cores inside the main fabric.

Soft Microprocessor Cores

As opposed to embedding a microprocessor physically into the fabric of the chip, it is possible to configure a group of programmable logic blocks to act as a microprocessor. These are typically called soft cores, but they may be more precisely categorized as either “soft” or “firm” depending on the way in which the microprocessor's functionality is mapped onto the logic blocks. Soft cores are simpler (more primitive) and slower than their hard-core counterparts.

—Technology Trade-offs—

A soft core typically runs at 30 to 50 percent of the speed of a hard core.

However, they have the advantage that you only need to implement a core if you need it and that you can instantiate as many cores as you require until you run out of resources in the form of programmable logic blocks.

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URL: https://www.sciencedirect.com/science/article/pii/B9780750689748000028
2017, Renewable and Sustainable Energy ReviewsB. Abad, ... M.S. Martin-Gonzalez

2.4.1.2 Experimental setup

Fig. 10 shows the experimental setup where a nanosecond pulsed laser is used as pump beam, which heats the sample and a probe laser almost collinear to the pump beam. This is the responsible for the detection of the thermal response of the sample by means of a photomultiplier.

Fig. 10.

Fig. 10. Pulsed photothermal mirror technique setup.

In order to ensure a good absorbance of the incident radiation, the sample should be opaque with an extremely low roughness, which can be achieved by surface polishing.

The response time depends on the thermal diffusivity of the sample ranging from hundreds of microseconds to milliseconds [118]. Thus, a regular photomultiplier, whose response time is less than 2 μs, is fast enough to perform the measurement.

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IV.A Photoconductor

The photoconductor, as shown in Fig. 7, depends upon the creation of holes or electrons in a uniform bulk semiconductor material, and the responsivity, temporal response, and wavelength cutoff are unique to the individual semiconductor. An intrinsic photoconductor utilizes “across-the-gap” photoionization or hole-electron pair creation. An extrinsic photoconductor depends upon the ionization of impurities in the material and in this case only one carrier, either hole or electron, is active. The same is true for a quantum-well photoconductor, in which electrons or holes can be photoexcited from a small potential well in the narrower band-gap regions of the semiconductor. The quantum efficiency for the structure in the figure is determined by the absorption coefficient, α, and may be written as η = (1 − R)[1 − e−αd), where R is the reflection coefficient at the top surface. Carriers produced by the radiation, P, flow in the electric field and contribute to this current flow for a time, τr, the recombination time. The value of the current is

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FIGURE 7. Photoconductor. Intrinsic operation shown. In extrinsic mode, mobile electrons are photoexcited from fixed positive donor impurities, or holes from negative acceptors.

(22)i=(qV/L)ηPτrhν=(τr/τt)ηqPhν=ηqGpPhν=P;=nqGphν,GP=(τr/τt)

where τt is the carrier transit time through the device and Gp is the photoconductive gain. In the first term of the equation, the fraction in parentheses is the current produced by a carrier of charge, q, moving at a velocity, v, between electrodes spaced at a distance, L. The second term is the average number of carriers, the rate of production times the lifetime. The transit time from one end of the structure to the other is τt = L/v = LE = L2V, with μ the carrier mobility. The photoconductive gain will be greater than unity if the lifetime exceeds the transit time. In this case, an unrecombined excess carrier leaving the material is immediately replaced by a new carrier at the opposite end, maintaining charge neutrality. A 1-mm-long detector might have a transit time as short as a microsecond, so that for a 1-ms recombination time, the gain could be as high as 1000. The current noise, produced by the signal-induced random (g)eneration of carriers as well as the random (r)ecombination, is called g-r noise and is given by

(23)in2=4qGp2ηqPhνB

not too different from the noise current of the photomultiplier above. The circuit of Fig. (2b) is applicable to the photoconductor, but the dark current associated with residual thermally excited carriers can produce enough noise so that the detector is still not signal or photon noise limited, even with gains of 1000 or greater. The dark current noise is given by in2¯=4qGpiD. In addition, the dark resistance shunts the external load, R, in Fig. (2b), reducing the signal voltage.

Photoconductors have two general uses. First, extrinsic, or impurity-doped, materials such as germanium and silicon can be operated at extremely long wavelengths using an appropriate low ionization energy impurity, although they usually require cryogenic cooling. Second, the ease of fabrication (no p-n junction required) makes them economically attractive for the middle and long wavelength infrared regions where the ultimate in sensitivity is not required. Intrinsic photoconductor materials include lead sulfide, lead selenide, cadmium sulfide, and mercury cadmium telluride, while germanium and silicon are the usual hosts for extrinsic photoconductors with impurities such as arsenic, copper, gold, and indium.

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Example 1.7

Express 10 seconds in (1) milliseconds, (2) microseconds.

Solution

1

To convert from units to multiples or submultiples of units it is necessary to divide by the multiple or submultiple. To find the number of milliseconds in 1 second we simply divide by the submultiple 10−3. Thus 1 second = 1/10−3 = 103 milliseconds. In 10 seconds there are therefore 10 × 103 = 104 ms.

2

To find the number of microseconds in 10 seconds we divide by the submultiple 10−6. Thus in 10 s there are 10/10−6 = 107 µs.

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URL: https://www.sciencedirect.com/science/article/pii/B9780340631980500034

5.6.5 Time Functions

The following built-in time functions are available:

micros(): This function returns (in microseconds) the number of microseconds since a program started running.

millis(): This function returns (in milliseconds) the number of milliseconds since a program started running.

delay(ms): This function pauses the program for the amount of milliseconds specified in the argument. In the following example, the program is paused for 1 s:

delay(1000);

delayMicroseconds(μs): This function pauses the program for the amount of microseconds specified in the argument.

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2.6.3 Pulse Voltages

The response of a high voltage gap to a fast-rise “square” voltage pulse has been extensively studied. In particular, microsecond and nanosecond pulse techniques have been used to investigate the fundamental physical processes responsible for initiating a high voltage vacuum arc. However, in view of the importance of this topic, a full discussion of these experiments will be delayed until Chapters 6 and 10 for the respective cases of a point-plane electrode geometry and a range of device applications.

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